We have successfully demonstrated >1 kV Ga2O3 trench MOS-type SBDs and normally-off FETs with “Jena-Xing Group” at Cornell University. These results are published in Applied Physics Letters and IEEE Electron Device Letters.

■1 kV Ga2O3 trench MOS-type SBDs
Article title: 1230 V β-Ga2O3 trench Schottky barrier diodes with an ultra-low leakage current of <1 μA/cm2
Journal title: Applied Physics Letters, 113, 202101 (2018)
DOI: 10.1063/1.5052368

■1 kV Ga2O3 trench MOS-type normally-off FETs
Article title: Enhancement-Mode Ga2O3Vertical Transistors With Breakdown Voltage >1 kV
Journal title: IEEE Electron Device Letters, Vol. 39, No. 6 (2018)
DOI: 10.1109/LED.2018.2830184