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News release
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Novel Crystal Technology Achieves Breakthrough in Ga2O3 Crystal Growth, Paving Way for Larger, Higher-Quality Wafers
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World’s first inverted gallium oxide DI-MOS transistor
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Third-generation gallium-oxide 100-mm epitaxial wafer with ten times fewer killer defects
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World’s first successful epitaxial deposition of gallium oxide on a 6-inch wafer using the HVPE method
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The world’s first ampere-class 1200-V breakdown-voltage gallium oxide Schottky barrier diode
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Gallium oxide vertical transistor with the world’s highest breakdown voltage
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High-quality 100-mm β-type gallium oxide epitaxial wafers have been developed.
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Development of high-quality β-type gallium oxide film growth technique has been achieved
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World’s first successful development of trench MOS type power transistor using gallium oxide epitaxial film
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Successfully developed ultra low power consumption gallium oxide Schottky barrier diode