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Standard specifications of MBE (AlxGa1-x)2O3 Epitaxial Wafers
Epitaxial layer (Growth method: MBE)
| Property | Specification |
|---|---|
| Al mole fraction | x≦0.23 |
| Dopant | Si(n-type) |
| Doping concentration | ≦1x1018 cm-3 |
| Thickness | ≦60 nm |
Wafer
| Property | Specification | |
|---|---|---|
| Dopant | Sn(n-type) | Fe(semi-insulating) |
| Doping concentration | 1~9x1018 cm,sup>-3 | - |
| Resistivity | - | ≧1010 Ωcm |
| Orientation | (010) | |
| Size | 10x15 mm2 | |
| Thickness | 0.5 mm | |
| XRD FWHM | ≦150 arcsec | |
| Off set angle | 0°±1° | |
Remarks
1 These products must be used for research and development purposes only.
2 The substrates must not be used as a seed crystal.
3 The specifications are subject to change without notice.
